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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 7A *Good Linearity of hFE *Complement to Type 2SA1941 APPLICATIONS *Power amplifier applications *Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 140 V 140 V 5 V 10 A 1 A 100 W 150 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5198 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 A IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 A hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications R55 55-65 R65 65-75 w w R75 75-85 O115 115125 scs .i w R85 85-95 IC= 5A ; VCE= 5V IE=0 ; VCB= 10V;ftest= 1.0MHz .cn mi e 55 35 160 170 pF IC= 1A ; VCE= 5V 30 MHz O95 95-105 O105 105-115 O125 125-135 O135 135-145 O145 145-155 O155 155-160 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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